Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications
S. Mookerjea, A. Liu, S. Datta, D. Mohata, R. Krishnan,
Jawar Singh, A. Vallett, A. Ali, T. Mayer, V. Narayanan, D. Schlom,
Experimental Demonstration of 100nm Channel Length In0.53Ga0.47As-based Vertical Inter-band Tunnel Field Effect Transistors (TFETs) for Ultra Low-Power Logic and SRAM Applications.
To appear in the proceedings of IEEE International Electron Devices Meeting (IEDM), December, Baltimore, 2009. December 2009. No electronic version available.
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